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ZXTDE4M832 MPPSTM Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP (Micro Leaded Package), these low saturation NPN / PNP combination dual transistors offer lower on state losses making them ideal for use in DC-DC circuits and various driving and power-management functions. Users will also gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels PCB area and device placement savings Lower package height (0.9mm nom) Reduced component count 3mm x 2mm Dual Die MLP VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A C2 C1 FEATURES * Low Equivalent On Resistance * Extremely Low Saturation Voltage (-185mV max @ 1A--NPN) * HFE specified up to -5A * IC = -3.5A Continuous Collector Current * 3mm x 2mm MLP B2 B1 E2 E1 APPLICATIONS * DC - DC Converters * Charging circuits * Power switches * Motor control PINOUT ORDERING INFORMATION DEVICE ZXTDE4M832TA ZXTDE4M832TC REEL 7 13 TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3000 10000 3mm x 2mm Dual MLP underside view DEVICE MARKING DE4 ISSUE 1 - JUNE 2002 1 ZXTDE4M832 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current (a)(f) Base Current Power Dissipation at TA=25C (a)(f) Linear Derating Factor Power Dissipation at TA=25C (b)(f) Linear Derating Factor Power Dissipation at TA=25C (c)(f) Linear Derating Factor Power Dissipation at TA=25C (d)(f) Linear Derating Factor Power Dissipation at TA=25C (d)(g) Linear Derating Factor Power Dissipation at TA=25C (e)(g) Linear Derating Factor Storage Temperature Range Junction Temperature SYMBOL V CBO V CEO V EBO I CM IC IB PD PD PD PD PD PD T stg Tj NPN 100 80 7.5 5 3.5 1000 1.5 12 2.45 19.6 1 8 1.13 9 1.7 13.6 3 24 -55 to +150 150 PNP -70 -70 -7.5 -3 -2.5 UNIT V V V A A mA W mW/C W mW/C W mW/C W mW/C W mW/C W mW/C C C THERMAL RESISTANCE PARAMETER Junction to Ambient (a)(f) Junction to Ambient (b)(f) Junction to Ambient (c)(f) Junction to Ambient (d)(f) Junction to Ambient (d)(g) Junction to Ambient (e)(g) Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250C/W giving a power rating of Ptot = 500mW. SYMBOL R JA R JA R JA R JA R JA R JA VALUE 83.3 51 125 111 73.5 41.7 UNIT C/W C/W C/W C/W C/W C/W ISSUE 1 - JUNE 2002 2 ZXTDE4M832 TYPICAL CHARACTERISTICS 10 IC Collector Current (A) 1 DC 1s IC Collector Current (A) VCE(SAT) Limited 10 VCE(SAT) Limited 1 DC 1s 100ms 10ms Note (a)(f) Single Pulse, Tamb=25C 1ms 100us 0.1 Note (a)(f) 100ms 10ms 1ms 100us Single Pulse, Tamb=25C 0.1 0.01 0.01 0.1 0.1 1 10 100 1 10 100 VCE Collector-Emitter Voltage (V) VCE Collector-Emitter Voltage (V) NPN Safe Operating Area 3.5 PNP Safe Operating Area Max Power Dissipation (W) 2oz Cu Note (e)(g) Tamb=25C Thermal Resistance (C/W) 80 60 Note (a)(f) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1oz Cu Note (d)(f) 2oz Cu Note (a)(f) 1oz Cu Note (d)(g) D=0.5 40 20 D=0.2 Single Pulse D=0.05 D=0.1 0 100 1m 10m 100m 1 10 100 1k 25 50 75 100 125 150 Pulse Width (s) Temperature (C) Transient Thermal Impedance 3.5 Derating Curve 225 200 175 150 125 100 75 50 25 0 0.1 PD Dissipation (W) 3.0 Tj max=150C 2.5 2.0 1.5 1.0 0.5 0.0 0.1 Thermal Resistance (C/W) Tamb=25C 2oz copper Note (g) Continuous 2oz copper Note (f) 1oz copper Note (f) 1oz copper Note (g) 1oz copper Note (f) 1oz copper Note (g) 2oz copper Note (f) 2oz copper Note (g) 1 10 100 1 10 100 Board Cu Area (sqcm) Board Cu Area (sqcm) Power Dissipation v Board Area Thermal Resistance v Board Area ISSUE 1 - JUNE 2002 3 ZXTDE4M832 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) 15 45 145 160 240 1.09 0.96 200 300 110 60 20 100 450 450 170 90 30 10 160 11.5 86 1128 18 MIN. 100 80 7.5 TYP. 180 110 8.2 25 25 25 20 60 185 200 325 1.175 1.05 900 MAX. UNIT V V V nA nA nA mV mV mV mV mV V V CONDITIONS. I C =100 A I C =10mA* I E =100 A V CB =80V V EB =6V V CE =65V I C =0.1A, I B =10mA* I C =0.5A, I B =50mA* I C =1A, I B =20mA I C =1.5A, I B =50mA I C =3.5A, I B =300mA I C =3.5A, I B =300mA* I C =3.5A, V CE =2V* I C =10mA, V CE =2V* I C =200mA, V CE =2V* I C =1A, V CE =2V* I C =1.5A, V CE =2V* I C =3A, V CE =2V* I C =5A, V CE =2V* I C =50mA, V CE =10V f=100MHz V CB =10V, f=1MHz V CC =10V, I C =1A I B1 =I B2 =25mA Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio V BE(sat) V BE(on) h FE Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT C obo t (on) t (off) MHz pF ns ns *Measured under pulsed conditions. ISSUE 1 - JUNE 2002 4 ZXTDE4M832 NPN TYPICAL CHARACTERISTICS ISSUE 1 - JUNE 2002 5 ZXTDE4M832 PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) -35 -135 -140 -175 0.94 0.78 300 300 175 40 150 470 450 275 60 10 180 14 40 700 20 MHz pF ns ns MIN. -70 -70 -7.5 TYP. -150 -125 -8.5 -25 -25 -25 -50 -200 -220 -260 1.05 1.00 MAX. UNIT V V V nA nA nA mV mV mV mV V V CONDITIONS. I C =-100 A I C =-10mA* I E =-100 A V CB =-55V V EB =-6V V CE =-55V I C =-0.1A, I C =-0.5A, I C =-1.0A, I C =-1.5A, I B =-10mA* I B =-20mA* I B =-100mA* I B =-200mA* Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio V BE(sat) V BE(on) h FE I C =-1.5A, I B =-200mA* I C =-1.5A, V CE =-5V* I C =-10mA, V CE =-5V* I C =-100mA, V CE =-5V* I C =-1A, V CE =-5V* I C =-1.5A, V CE =-5V* I C =-3A, V CE =-5V* I C =-50mA, V CE =-10V f=100MHz V CB =-10V, f=1MHz V CC =-50V, I C =-1A I B1 =I B2 =-50mA Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT C obo t (on) t (off) *Measured under pulsed conditions. ISSUE 1 - JUNE 2002 6 ZXTDE4M832 PNP TYPICAL CHARACTERISTICS 0.6 25C 0.6 IC/IB=10 0.5 0.5 VCE (VOLTS) VCE (VOLTS) 0.4 0.3 0.2 0.1 0.0 1mA IC/IB=50 IC/IB=20 IC/IB=10 IC/IB=5 0.4 0.3 100C 0.2 0.1 0.0 1mA 25C -55C 10mA 100mA 1A 10A 10mA 100mA 1A 10A Collector Current Collector Current VBE(SAT) vs IC VCE(SAT) vs IC 1.6 VCE=5V 1.2 IC/IB=5 1.4 100C Normalised Gain 1.0 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1mA 10mA 100mA 1A 10A -55C 25C T pical Gain (hFE) 450 VBE (VOLTS) 0.8 0.6 0.4 0.2 0.0 1mA -55C 25C 100C 225 10mA 100mA 1A 10A Collector Current Collector Current hFE vs IC VBE(SAT) vs IC amb = 25 deg C SINGLE PULSE TEST T 1.0 0.8 10 VCE=5V -55C VBE (VOLTS) 25C IC (AMPS) 1.0 0.6 100C 0.4 0.2 0.1 D.C. 1s 100ms 10ms 1ms 100s 0.0 1mA 0.01 10mA 100mA 1A 10A 0.1 1 10 100 Collector Current VCE (VOLTS) VBE(ON) vs IC ISSUE 1 - JUNE 2002 7 Safe Operating Area ZXTDE4M832 MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package) CONTROLLING DIMENSIONS IN MILLIMETRES APPROX. CONVERTED DIMENSIONS IN INCHES MLP832 PACKAGE DIMENSIONS MILLIMETRES DIM A A1 A2 A3 b b1 D D2 D3 MIN. 0.80 0.00 0.65 0.15 0.24 0.17 MAX. 1.00 0.05 0.75 0.25 0.34 0.30 INCHES MIN. 0.031 0.00 0.0255 0.006 0.009 0.0066 MAX. 0.039 0.002 0.0295 0.0098 0.013 0.0118 DIM e E E2 E4 L L2 r 0 MILLIMETRES MIN. MAX. INCHES MIN. MAX. 0.65 REF 2.00 BSC 0.43 0.16 0.20 0.63 0.36 0.45 0.125 0.075 BSC 12 0.0256 BSC 0.0787 BSC 0.017 0.006 0.0078 0.00 0.0249 0.014 0.0157 0.005 3.00 BSC 0.82 1.01 1.02 1.21 0.118 BSC 0.032 0.0397 0.040 0.0476 0.0029 BSC 0 12 (c) Zetex plc 2002 Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 uksales@zetex.com Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - JUNE 2002 8 |
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